IACC
Organization
Industry–Academia
Collaborative Chair
Section / Group
- AIST-NU GaN Advanced Device Open Innovation Laboratory
- MIRISE Technologies Advanced Power Electronics Industry-Academia Collaborative Chair
- TOYODA-GOSEI GaN Leading Innovative R&D Industry-Academia Collaborative Chair
- AsahiKASEI Innovative Devices Industry-Academia Collaborative Chair
- TOYOTA CENTRAL R&D LABS GaN Power Device Industry-Academia Collaborative Chair
- MITSUBISHI CHEMICAL GaN Substrate Devices Industry-Academia Collaborative Chair
- Photo electron Soul / Nagoya University, Joint Lab. of GaN e-beam Device
AIST-NU GaN Advanced Device Open Innovation Laboratory
Our laboratory covers the research area from materials science to application of nitride semiconductors. To function as a bridge between research and industry, we purposely examine basic research, and expedite connecting research results to practical use.
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- AlGaN/GaN HEMT
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- Switching characteristics
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- Schematic of a novel directional LED based on evanescent wave coupling
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- Emission pattern
Member
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Project
Optical devices
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Project
Crystal growth and device applications for the next-generation power and high-frequency semiconductor materials
MIRISE Technologies Advanced Power Electronics Industry-Academia Collaborative Chair
To achieve a sustainable society that ensures a positive symbiotic relationship between humans and Earth, the funded division researches power electronics technologies for future mobility. The division researches and develops material technologies, device technologies, and system applications of wide-bandgap semiconductors with a wide perspective, contributing to the realization of the sustainable society as well as nurturing young researchers for the next generation.
Member
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Project
Development of Crystal growth of the next-generation power-semiconductor materials
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Designated Professor
NAGASATO, Yoshitaka
Project
Research of Fabrication Process and Device Structure of GaN Power Devices
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Project
Research of quality improvements and cost-reduced technologies of the next-generation power semiconductor crystals
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Project
Research of Fabrication Process and Device Structure of GaN Power Devices
TOYODA-GOSEI GaN Leading Innovative R&D Industry-Academia Collaborative Chair
In 1986, Toyoda Gosei Co., Ltd., started a joint research project with Professor Akasaki, Professor Amano, and Toyota Central R&D Labs., Inc., and began fundamental research on GaN materials. The commercialization of LEDs and their subsequent widespread adoption were based on this research. The core competencies cultivated from research, commercialization, expansion, and continuation will be utilized to create new business opportunities.
Member
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Project
Research on applications of GaN power devices
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Project
Research of GaN to new product development
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Project
Development of wireless power transmission system
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Visiting Professor
FUKUSHIMA, Hideoki
AsahiKASEI Innovative Devices Industry-Academia Collaborative Chair
AsahiKASEI Innovative Devices IA Collaborative Chair exploit our high-quality AlN single-crystal substrate technology, exploratory research into novel devices, and applications to create new business opportunities.
2-inch, single-crystal AlN substrate
Member
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Project
Research and development of thin film growth technology for wide band gap semiconductor devices
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Project
Research and development of UV-light emitting devices of nitride semiconductor
TOYOTA CENTRAL R&D LABS GaN Power Device Industry-Academia Collaborative Chair
In order to realize GaN power devices, we research the following:
①Epitaxial growth with precise control of impurities and point defects
②Gate insulators and MOS interfaces
③Process technologies, such as low-damage etching and ion implantation
④Device design for very low loss
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- Fig.1 A Vertical trench GaN device
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- Fig.2 Hall mobility in our n-type low-doping epi-layer
Member
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Project
High-quality epitaxial growth for GaN power devices
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Project
Process technology and device design and evaluation for GaN power devices
MITSUBISHI CHEMICAL GaN Substrate Devices Industry-Academia Collaborative Chair
MITSUBISHI CHEMICAL GaN Substrate Devices Industry-Academia Collaborative Chair
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MITSUBISHI CHEMICAL GaN Substrate Devices Industry-Academia Collaborative Chair is engaged in the research and development of high-quality gallium nitride (GaN) substrates that serve as the foundation of new device structures exploiting the excellent properties of GaN, focusing on the following themes. ・Investigation of the correlation between substrate quality (e.g., crystal defects, impurities) and device characteristics, as well as elucidation of the mechanism underlying the correlation |
Member
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Project
Research and development of high-quality GaN substrates for high-performance semiconductor devices
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Project
Characterization of semiconductor devices on high-quality GaN substrates
Photo electron Soul / Nagoya University, Joint Lab. of GaN e-beam Device
Photo electron Soul Inc. is the only company in the world that supplies semiconductor photocathode e-beam systems for industrial use. In our joint laboratry, we are researching GaN-based semiconductors as e-beam devices. Through this activity, we are accelerating the spread of GaN e-beam devices, which is a new application of GaN-based semiconductors, in industry.
Member
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Project
R&D of GaN-based semiconductors as e-beam devices
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Project
R&D of GaN-based semiconductors as e-beam devices
