IACC

Organization

Industry–Academia
Collaborative Chair

Section / Group

AIST-NU GaN Advanced Device Open Innovation Laboratory

AIST-NU GaN Advanced Device Open Innovation Laboratory


Our laboratory covers the research area from materials science to application of nitride semiconductors. To function as a bridge between research and industry, we purposely examine basic research, and expedite connecting research results to practical use.


  • AlGaN/GaN HEMT

  • Switching characteristics

  • Schematic of a novel directional LED based on evanescent wave coupling

  • Emission pattern

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Member

  • Designated Professor

    WANG, Xuelun
    Project

    Optical devices

  • Designated Professor

    YAMADA, Hisashi
    Project

    Crystal growth and device applications for the next-generation power and high-frequency semiconductor materials

MIRISE Technologies Advanced Power Electronics Industry-Academia Collaborative Chair

    MIRISE Technologies Advanced Power Electronics Industry-Academia Collaborative Chair is looking into the future of high-power, high-efficiency, and high-frequency electric drive systems for electrification vehicles, and promoting exploratory research into gallium nitride power semiconductor materials, devices, and application systems.

 

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Member

  • Designated Professor

    ONDA, Shoichi
    Project

    Development of Crystal growth of the next-generation power-semiconductor materials

  • Designated Professor

    NAGASATO, Yoshitaka
    Project

    Research of Fabrication Process and Device Structure of GaN Power Devices

  • Designated Associate Professor

    KOJIMA, Jun
    Project

    Research of quality improvements and cost-reduced technologies of the next-generation power semiconductor crystals

  • Designated Associate Professor

    KIDA, Hirofumi
    Project

    Research of Fabrication Process and Device Structure of GaN Power Devices

TOYODA-GOSEI GaN Leading Innovative R&D Industry-Academia Collaborative Chair

TOYODA-GOSEI GaN Leading Innovative R&D Industry-Academia Collaborative Chair

 

In 1986, Toyoda Gosei Co., Ltd., started a joint research project with Professor Akasaki, Professor Amano, and Toyota Central R&D Labs., Inc., and began fundamental research on GaN materials. The commercialization of LEDs and their subsequent widespread adoption were based on this research. The core competencies cultivated from research, commercialization, expansion, and continuation will be utilized to create new business opportunities.

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Member

  • Designated Professor

    OKA, Tohru
    Project

    Research on applications of GaN power devices

  • Designated Associate Professor

    USHIDA, Yasuhisa
    Project

    Research of GaN to new product development

  • Designated Assistant Professor

    SUMIYA, Kengo
    Project

    Development of wireless power transmission system

  • Visiting Professor

    FUKUSHIMA, Hideoki

AsahiKASEI Innovative Devices Industry-Academia Collaborative Chair

AsahiKASEI Innovative Devices IA Collaborative Chair exploit our high-quality AlN single-crystal substrate technology, exploratory research into novel devices, and applications to create new business opportunities.

AsahiKASEI Innovative Devices Industry-Academia Collaborative Chair

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Member

  • Designated Associate Professor

    YOSHIKAWA, Akira
    Project

    Research and development of thin film growth technology for wide band gap semiconductor devices

  • Designated Assistant Professor

    ZHANG, Ziyi
    Project

    Research and development of UV-light emitting devices of nitride semiconductor

TOYOTA CENTRAL R&D LABS GaN Power Device Industry-Academia Collaborative Chair

TOYOTA CENTRAL R&D LABS GaN Power Device Industry-Academia Collaborative Chair

 

In order to realize GaN power devices, we research the following:
①Epitaxial growth with precise control of impurities and point defects
②Gate insulators and MOS interfaces
③Process technologies, such as low-damage etching and ion implantation
④Device design for very low loss

 

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Member

  • Designated Professor

    TOMITA, Kazuyoshi
    Project

    High-quality epitaxial growth for GaN power devices

  • Designated Professor

    KANECHIKA, Masakazu
    Project

    Process technology and device design and evaluation for GaN power devices

MITSUBISHI CHEMICAL GaN Substrate Devices Industry-Academia Collaborative Chair

MITSUBISHI CHEMICAL GaN Substrate Devices Industry-Academia Collaborative Chair

MITSUBISHI CHEMICAL GaN Substrate Devices Industry-Academia Collaborative Chair is engaged in the research and development of high-quality gallium nitride (GaN) substrates that serve as the foundation of new device structures exploiting the excellent properties of GaN, focusing on the following themes.

・Investigation of the correlation between substrate quality (e.g., crystal defects, impurities) and device characteristics, as well as elucidation of the mechanism underlying the correlation
・Clarification of the quality and characteristics required for GaN substrates for new devices

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Member

  • ISO, Kenji

    Designated Professor

    ISO, Kenji
    Project

    Research and development of high-quality GaN substrates for high-performance semiconductor devices

  • Designated Assistant Professor

    HIROSAWA, Takuya
    Project

    Characterization of semiconductor devices on high-quality GaN substrates

Photo electron Soul / Nagoya University, Joint Lab. of GaN e-beam Device

 Photo electron Soul Inc. is the only company in the world that supplies semiconductor photocathode e-beam
systems for industrial use. In our joint laboratry, we are researching GaN-based semiconductors as e-beam devices.
Through this activity, we are accelerating the spread of GaN e-beam devices, which is a new application of GaN-based
semiconductors, in industry.

 

Photo electron Soul / Nagoya University, Joint Lab. of GaN e-beam Device

 

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Member

  • Designated Lecturer

    SHIKANO, Haruka
    Project

    R&D of GaN-based semiconductors as e-beam devices

  • Designated Assistant Professor

    SATO, Daiki
    Project

    R&D of GaN-based semiconductors as e-beam devices

UJ-Crystal ultra-high quality SiC IA Collaborative Chair

UJ-Crystal Co., Ltd. is a venture company originating from Nagoya University, and aims to quickly implement in society of ultra-high quality SiC single crystal substrates using the SiC solution growth technology and machine learning technology cultivated. This will enable further energy savings in the EV and smart grid fields and contribute to carbon neutrality.

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Member

  • Designated Associate Professor

    MURAYAMA, Kenta
    Project

    Research on solution-growth technology for high-quality SiC crystals