CIRFE

Organization

Center for Integrated Research
of Future Electronics

Center for Integrated Research of Future Electronics
Director of the Center

AMANO, Hiroshi

The Center for Integrated Research of Future Electronics (CIRFE), established in October 2015, engages in lead­ing-edge electronics research-including research in the un­traversed area of devices with gallium nitride, carbon nano­-tube, SiC and other post-silicon materials-while also cultivating top-notch human resources to lay the foundations of the future electronics industry. CIRFE is divided into seven sections, each staffed with instructors who serve as leading spe­cialists in their field, and equipped with outstanding research infrastructure. The Center's fully integrated joint research and education system covers everything from basic scientific education on materials, measuring, devices, and applied systems through to the completion of student educational courses. Through research on energy-saving devices, an area in which very little experimentation has been carried out anywhere in the world, CIRFE strives to foster well-trained human resources who will lead the field of manufacturing in the twenty-first century.

CIRFE

  • Director of the Center

    AMANO, Hiroshi

  • Vice-director of the Center

    IKARASHI, Nobuyuki

Movie

CIRFE Introduction video

  • Amplify the passion for the future(2min.40sec.)

  • Short version(2min.)

  • Long version(12min.40sec.)

Section / Group

Device Innovation Section

Prototype of Blue LED

The Device Innovation Section aims to develop devices with new functions by establishing new crystal-growth methods and process development for cutting-edge electronics materials with a central focus on wide-bandgap semiconductors, such as gallium nitride and silicon carbide, and nanocarbon materials. A fully integrated research approach enables us to establish a unified process from crystal growth to device design, manufacturing, and assessment.

Crystal Growth

To realize gallium nitride semiconductor devices that will serve as the foundation of next-generation electronics, we carry out a wide variety of research from the growth of bulk crystals for use as substrates free of killer defects to the growth and processing of next-generation quantum structures and nanostructures.

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Member

  • Director of CIRFE, Professor

    AMANO, Hiroshi
    Project

    Generation of noble nitride-based devices and their contribution to the development of new infrastructure

  • Designated Professor

    SASAOKA, Chiaki
    Project

    Study on nitride semiconductor crystal and devices

  • Associate Professor

    HONDA, Yoshio
    Project

    Creation of sophisticated devices based on Nitride semiconductor

  • Designated Associate Professor

    TOMIDA, Daisuke
    Project

    Development of fabricating process of nitride crystals using supercritical ammonia

  • Designated Associate Professor

    NITTA, Shugo
    Project

    Study on innovative nitride semiconductor crystal growth technique and future devices

  • Researcher

    ANDO, Yuto
    Project

    Development of Nitride Semiconductor Power Devices

  • Researcher

    SENA, Hadi
    Project

    Development of heterojunction bipolar transistors (HBT) by nitride semiconductors

  • 藤元直樹 研究員

    Researcher

    FUJIMOTO, Naoki
    Project

    Research of growth technology of high quality GaN bulk crystal

  • Researcher

    FURUSAWA, Yuta
    Project

    Study on crystal growth and device function of wide bandgap semiconductor (BAlGaInN)

  • Researcher

    YE, Zheng
    Project

    Growth mechanism and gas phase reaction on Nitride semiconductor MOVPE analyzed by high-resolution mass spectrometry

  • Researcher

    WATANABE, Hirotaka
    Project

    High quality nitride semiconductor crystal growth for future devices

  • Researcher

    WANG, Jia
  • Visiting Professor

    SUBRAMANIAM, Arulkumaran
  • Visiting Professor

    ISHIKAWA, Yukari
  • Visiting Professor

    OTA, Koichi
  • Visiting Professor

    KOIDE, Yasuo
  • Visiting Professor

    NAKAMURA, Tohru
  • Visiting Professor

    MATSUMOTO, Koh
  • Visiting Professor

    LIU, Yuhuai
  • Visiting Associate Professor

    TANAKA, Atsushi
  • Visiting Associate Professor

    NISHITANI, Tomohiro
  • Visiting Associate Professor

    WAKEJIMA, Akio
  • Visiting Faculty

    KORAI, Takao

Surface/Interface

The effective use of electric energy can markedly reduce worldwide power consumption and improve the performance of electrical equipment including electric vehicles. This is realized using power semiconductors. Various electrical products generate heat. For example, much electricity is used to remove the heat generated by computer servers used to support our networked society. Ceramic materials play a key role in suppressing such heat. The use of ceramic materials markedly reduces the amount of CO2 generated. In our laboratory, we are developing new crystal growth technologies using artificial intelligence, and we are realizing new crystal materials such as power semiconductors, ceramics, and nanoparticles using the developed technologies. We aim to build a sustainable society that meets the Sustainable Development Goals (SDGs).

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Member

  • Professor

    UJIHARA, Toru
    Project

    Study on a novel processes based on crystal growth theory for high-quality crystal of functional materials (SiC, AlN, etc.)

  • 田川美穂 准教授

    Associate Professor

    TAGAWA, Miho
    Project

    The Creation of Bio-inspired Novel Functionalized Nanomaterials

  • Associate Professor

    HARADA, Shunta
    Project

    Control of defects in crystalline materials

  • Designated Associate Professor

    FURUSHO, Tomoaki
    Project

    Crystal Growth of High Qualty SiC

  • Designated Assistant Professor

    ZHU, Can
    Project

    Bulk growth of high quality SiC crystal by solution method

  • 角岡研究員

    Researcher

    TSUNOOKA, Yosuke
    Project

    Digital Twin for Crystal Growth

  • Visiting Professor

    UDA,Satoshi
  • Visiting Professor

    KAMEI, Kazuhito
  • Visiting Professor

    TSUKAMOTO, Katsuo
  • Visiting Professor

    YONEZAWA, Yoshiyuki
  • Visiting Associate Professor

    KUTSUKAKE, Kentaro
  • Researcher

    YU, Wancheng
  • Researcher

    SUZUKI, Koki
  • Researcher

    YOKOMORI, Maasa

Nanomaterial devices

Aiming at the creation of future electronics with affinity for human beings,we are striving to realize electronic devices that are transparent and flexible,taking advantage of the characteristics of nanomaterials such as carbon nanotubes. We will realize wearable healthcare devices that can be placed in direct contact with soft tissue of the human body.

 

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Member

  • Professor

    OHNO, Yutaka
    Project

    Development of energy-saving advanced electron devices based on nano-carbon materials

Energy Conversion Device

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Member

  • Professor

    USAMI, Noritaka
    Project

    Advanced photovoltaic cells with earth-abundant materials

Advanced Device

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Member

  • Professor

    SUDA, Jun
    Project

    GaN Power Devices

  • Associate Professor

    HORITA, Masahiro
    Project

    Characterization of material properties of wide bandgap semiconductors

Nanoelectronic Device

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Member

  • Professor

    NAKATSUKA, Osamu
    Project

    Research and development of thin film and interface engineering technologies of group-IV semiconductors for low-power consumption nanoelectronic devices

Semiconductor Engineering and Integration Science

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Member

  • 宮﨑誠一 教授

    Professor

    MIYAZAKI, Seiichi
    Project

    Study on Materials Processing and Characterization for Advanced Electron Devices

Multiphysics Simulation Section

The Multiphysics Simulation Section is engaged in research with the aim of realizing multiphysical-system-based predictable crystal-growth simulations that integrate first-principles calculation with macroscopic fluid dynamics via thermodynamic analysis. Additionally,this section is pursuing proposals for new gallium-nitride-based power devices.

Frontier Computational Material Science

Crystal growth process clarified by the multi-physics simulation.

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Member

  • Professor

    SHIRAISHI, Kenji
    Project

    Computational Studies on Semiconductor Crystal Growth

  • Associate Professor

    YOSHIMATSU, Katsunori
    Project

    Computational Science on Crystal Growth from a Viewpoint of Fluid Dynamics

  • Assistant Professor

    ARAIDAI, Masaaki
    Project

    First-Principles Study on Electronic Property of Surface and Interface

Materials Science based on Computics


物質科学の進展は、工学の隆盛を支え、人類の生活と歓びに寄与し
ます。近年のスパコンの発達を物質科学の進展に活かすには、物理学と高性能計算手法との融合が大事です。それをコンピューティクスと呼びます。我々はこのコンピューティクス・アプローチにより、パワー半導体とナノ材料・構造体の科学の進展を目指しています。

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Member

  • Designated Professor

    OSHIYAMA, Atsushi
    Project

    First-principle study on thin-film growth and surface/interface properties

  • Designated Assistant Professor

    CHOKAWA, Kenta
    Project

    First-Principles Study on Electronic Property of Surface and Interface

  • Designated Assistant Professor

    BUI, Thi Kieu My
    Project

    First Principles Simulations of GaN MOVPE Growth

Materials Nano-Characterization Section

The Materials Nano-Characterization Section develops nanoscale operand analysis techniques for semiconductor devices under operating conditions using electron microscopy and electron holography.
These efforts are part of research centered on themes such as interface electronic properties involving direct measurement of device operations and electric-field response measurements for semiconductor interface electronic structures.

Nano-Electronic Materials

Direct electrostatic potential mapping in nano-scaled FET
under operation mode using electron holography

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Member

  • Vice-director of CIRFE, Professor

    IKARASHI, Nobuyuki
    Project

    Nano-science and advanced electron microscopy for device innovation

  • Associate Professor

    NAGAO, Masahiro
    Project

    Analysis of Magnetic Properties by Advanced Electron Microscopy toward the Development of New Devices

  • Assistant Professor

    KANO, Emi
    Project

    Advanced electron microscopy analysis of GaN and other nitride semiconductors

  • Professor Emeritus

    TANAKA, Nobuo

System Applications Section

For the purpose of realizing high-efficiency, small, and lightweight power converters and motors used in hybrid vehicles, electric vehicles, power infrastructures, and next-generation airclafts, we carry out applied research on power electronics technology by integrating fields related to power semiconductors, controlling technology, and magnetic applications. We also conduct researches for RF applications focusing on the advantages of gallium nitride (GaN) devices.

Power Electronics

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Member

  • Professor

    YAMAMOTO, Masayoshi
    Project

    GaN and SiC power semiconductor module techniques and its industry applications

  • Associate Professor

    IMAOKA, Jun
    Project

    Development of Next-Generation Power Electronics Technology Based on Advanced Magnetic Application and Modeling Techniques and Its Industry Applications

  • Researcher

    ARAI, Daisuke
    Project

    Analysis and optimization of the behavior of GaN devices used in power electronic circuits

  • Researcher

    KAMIYA, Arihiro
    Project

    Research of electronics packaging technologies for GaN and SiC power semiconductor module and its industry applications and its industry applications

  • Researcher

    SHIGEMATSU, Koichi
    Project

    Research of advanced system simulation for Power Electronics and it's applications

  • Researcher

    SENANAYAKE, Thilak Ananda
    Project

    High Frequency Wireless Power Conversion Circuit using GaN Semiconductor Devices

  • Researcher

    YONEZAWA, Yu
    Project

    Research of high efficiency electric power conversion circuit using GaN Semiconductor Devices

  • Visiting Professor

    SATO, shinji
  • Visiting Professor

    HOSOTANI, Tatsuya
  • Visiting Associate Professor

    SHIN, Jongwon
  • Visiting Associate Professor

    MUKAIYAMA,Daisaku
  • Visiting Associate Professor

    MOSTAFA, Noah

RF Circuits

RF circuits group conducts researches of new circuit technology and the basic performance improvement of the elementary devices, aiming for micro- and millimeter-wave applications such as wireless energy transfer, next generation wireless communication systems, etc. By taking full advantages of gallium nitride (GaN) devices, we aim to dramatically reduce the energy consumptions and contribute to the realization of the society coping both convenience and sustainability.

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Member

  • Designated Professor

    HARA, Shinji
    Project

    Circuit design technologies using GaN for microwave & millimeter-wave applications

  • 末松 英治 研究員

    Researcher

    SUEMATSU, Eiji
    Project

    GaN circuit design technology in millimeter-wave & terahertz band

  • Researcher

    TANBA, Noriyuki
    Project

    Circuit design technologies using GaN for microwave & millimeter-wave applications

International Research Section

The International Research Section engages in research and development activities together with visiting professors invited from overseas. Additionally, the Section is cultivating an international research network as part of efforts to form a central venue for nitride semiconductor research.

New Ⅲ-Nitride Approaches

Future devices needs further Ⅲ-Nitride semiconductor development. This is especially true for the substrates and templates, since those ultimatively limit the performance. We explore these limits also by making proof of principle devices.

Reciprocal space map using high-resolution X-ray diffraction to estimate the basal plane stacking fault density
on (10-13) GaN crystals for green LEDs

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Member

  • Designated Professor

    PRISTOVSEK, Markus
    Project

    Better device materials from a better understanding of crystal growth

New Device Development

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Member

  • Designated Professor

    LEE, Dong Seon
  • Visiting Professor

    GRAHAM, Samuel
  • Visiting Professor

    SITAR, Zlatko
  • Visiting Professor

    GIL,Bernard
  • Visiting Professor

    SEONG, Tae-Yeon
  • Visiting Professor

    CHOWDHURY, Srabanti
  • Visiting Professor

    BOĆKOWSKI Michał Stanisław

Industry-Academia Collaborative Research Section

This section aims to boost the efficiency of collaborative industry‒academia research and development activities, and also serves as a mediator to help realize actual applications of CIRFE achievements and results in society.

Research strategy section

This section is established to promote implementation of gallium nitride technologies to our society. It organizes and promotes industry-academia collaborations as well as joint research projects. This section also provides a function of secretariat of GaN research strategy office of Nagoya University.

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Member

  • Professor

    SUDA, Jun
  • Designated Professor

    ARAI, Manabu
  • Designated Professor

    KACHI, Tetsu
  • Designated Professor

    SASAOKA, Chiaki
  • Designated Assistant Professor

    MATYS, Maciej
  • University Research Administrator

    MIZUNO, Koichi
  • University Research Administrator

    FUJIMOTO, Hiromasa
  • University Research Administrator

    YAMAGUCHI, Atsushi