CIRFE
Organization
Center for Integrated Research
of Future Electronics
Center for Integrated Research of Future Electronics
Director of the Center
AMANO, Hiroshi
The Center for Integrated Research of Future Electronics (CIRFE), established in October 2015, engages in leading-edge electronics research-including research in the untraversed area of devices with gallium nitride, carbon nano-tube, SiC and other post-silicon materials-while also cultivating top-notch human resources to lay the foundations of the future electronics industry. CIRFE is divided into six sections, each staffed with instructors who serve as leading specialists in their field, and equipped with outstanding research infrastructure. The Center’s fully integrated joint research and education system covers everything from basic scientific education on materials, measuring, devices, and applied systems through to the completion of student educational courses. Through research on energy-saving devices, an area in which very little experimentation has been carried out anywhere in the world, CIRFE strives to foster well-trained human resources who will lead the field of manufacturing in the twenty-first century.
CIRFE
Movie
CIRFE Introduction video
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Amplify the passion for the future（2min.40sec.）
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Short version（2min.）
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Long version（12min.40sec.）
Section / Group
Device Innovation Section
The Device Innovation Section aims to develop devices with new functions by establishing new crystal-growth methods and process development for cutting-edge electronics materials with a central focus on wide-bandgap semiconductors, such as gallium nitride and silicon carbide, and nanocarbon materials. A fully integrated research approach enables us to establish a unified process from crystal growth to device design, manufacturing, and assessment.
Prototype of Blue LED
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Crystal Growth (Amano Lab.)
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Nanomaterial devices (Ohno Lab.)
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Energy Conversion Device (Usami Lab.)
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Semiconductor Engineering And Integration-science (Miyazaki Lab.)
Crystal Growth
To realize gallium nitride semiconductor devices that will serve as the foundation of next-generation electronics, we carry out a wide variety of research from the growth of bulk crystals for use as substrates free of killer defects to the growth and processing of next-generation quantum structures and nanostructures.
Member
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Project
Generation of noble nitride-based devices and their contribution to the development of new infrastructure
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Project
Creation of sophisticated devices based on Nitride semiconductor
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Project
Study on nitride semiconductor crystal and devices
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Project
Creation of Next-Generation GaN Power Devices
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Project
Development of fabricating process of nitride crystals using supercritical ammonia
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Project
Study on innovative nitride semiconductor crystal growth technique and future devices
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Project
Development of Ｍicro-LEDs using Nitride semiconductor
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Project
Novel doping technology of nitride semiconductors and development of related devices
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Project
Development of Nitride semiconductor epitaxy and high-efficiency red-emitting Micro-LED devices
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Project
Research of growth technology of high quality GaN bulk crystal
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Project
Study on crystal growth and device function of wide bandgap semiconductor (BAlGaInN)
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Project
High quality nitride semiconductor crystal growth for future devices
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Project
Study on Novel Electronic Devices Based on Nitride Semiconductors and Characterization of Interface Properties
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Visiting Professor
OTA, Koichi
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Visiting Professor
MATSUMOTO, Koh
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Visiting Professor
MUTO, Hirotaka
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Visiting Professor
WAKEJIMA, Akio
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Visiting Associate Professor
NISHITANI, Tomohiro
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Visiting Faculty
KORAI, Takao
Surface/Interface
The materials used for power devices, solar batteries, LEDs, ceramics, and superconductors that help solve environmental and energy problems, as well as proteins required for drug development analysis, have crystal structures. By increasing our understanding and utilization of crystal growth, we aim to develop various materials that may change the world and produce materials that we have never encountered before.
Member
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Project
Study on a novel processes based on crystal growth theory for high-quality crystal of functional materials (SiC, AlN, etc.)
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Project
Application of information science to crystal engineering
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Project
Control of defects in crystalline materials
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Project
Multi-scale modeling and optimization for the solution growth of the SiC crystal
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Project
The development of an automatic defect inspection algorithm for semiconductor wafers
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Project
Simulations of dislocation contrasts in birefringence image considering photoelastic effect in SiC wafers
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Visiting Professor
UDA, Satoshi
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Visiting Professor
KAMEI, Kazuhito
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Visiting Professor
KOJIMA, Kazutoshi
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Visiting Professor
SUZUKI, Atsushi
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Visiting Professor
TSUKAMOTO, Katsuo
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Visiting Professor
FURUSHO, Tomoaki
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Visiting Professor
YONEZAWA, Yoshiyuki
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Visiting Associate Professor
SEKI, Kazuaki
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Visiting Associate Professor
MITANI, Takeshi
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Visiting Faculty
KURASHIGE, Kazuhisa
Nanomaterial devices
Member
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Project
Development of energy-saving advanced electron devices based on nano-carbon materials
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Project
Energy harvester based on nano carbon materials
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Visiting Faculty
OMACHI, Haruka
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Energy Conversion Device
Member
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Project
Advanced photovoltaic cells with earth-abundant materials
Advanced Device
Nanoelectronic Device
Member
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Project
Research and development of thin film and interface engineering technologies of group-IV semiconductors for low-power consumption nanoelectronic devices
Semiconductor Engineering and Integration Science
Member
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Project
Study on Materials Processing and Characterization for Advanced Electron Devices
Multiphysics Simulation Section
The Multiphysics Simulation Section is engaged in research with the aim of realizing multiphysical-system-based predictable crystal-growth simulations that integrate first-principles calculation with macroscopic fluid dynamics via thermodynamic analysis. Additionally,this section is pursuing proposals for new gallium-nitride-based power devices.
Frontier Computational Material Science (Shiraishi Lab.)
Frontier Computational Material Science
Crystal growth process clarified by the multi-physics simulation.
Member
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Project
Computational Studies on Semiconductor Crystal Growth
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Project
Development of mathematical and data scientific methodology for fluid mechanics and its applications
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Project
First-Principles Study on Electronic Property of Surface and Interface
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Project
Material properties of gallium nitride form ab initio calculations
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Visiting Professor
OHNO, Takahisa
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Visiting Associate Professor
SEINO, Kaori
Materials Science based on Computics
物質科学の進展は、工学の隆盛を支え、人類の生活と歓びに寄与します。近年のスパコンの発達を物質科学の進展に活かすには、物理学と高性能計算手法との融合が大事です。それをコンピューティクスと呼びます。我々はこのコンピューティクス・アプローチにより、パワー半導体とナノ材料・構造体の科学の進展を目指しています。
Member
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Project
First-principle study on thin-film growth and surface/interface properties
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Visiting Faculty
BUI, Thi Kieu My
Materials Nano-Characterization Section
The Materials Nano-Characterization Section develops nanoscale operand analysis techniques for semiconductor devices under operating conditions using electron microscopy and electron holography.
These efforts are part of research centered on themes such as interface electronic properties involving direct measurement of device operations and electric-field response measurements for semiconductor interface electronic structures.
Nano-Electronic Materials (Ikarashi Lab.)
Nano-Electronic Materials
Direct electrostatic potential mapping in nano-scaled FET
under operation mode using electron holography
Member
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Project
Nano-science and advanced electron microscopy for device innovation
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Project
Analysis of Magnetic Properties by Advanced Electron Microscopy toward the Development of New Devices
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Project
Advanced electron microscopy analysis of GaN and other nitride semiconductors
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System Applications Section
In the area of devices utilizing cutting-edge electronics materials, this Section focuses on the integration of such devices into various systems and pursues applied research with an eye toward real-life applications throughout society.
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Power Electronics (Yamamoto Lab.)
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RF Circuits (Hara Lab.)
Power Electronics
For the purpose of realizing high-efficiency, small, and lightweight power converters and motors used in hybrid vehicles, electric vehicles, power infrastructures, and next-generation airclafts, we carry out applied research on power electronics technology by integrating fields related to power semiconductors, controlling technology, and magnetic applications.
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- Sightseeing electric vehicle developed in our laboratory （equipped with in-wheel motors, can be fully charged by capacitor charging in 4 min compared with 5 h using conventional batteries）
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- Practical automobile power converter with highest power density in the world （3 W/cc or more） realized using GaN power semiconductor
Member
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Project
GaN and SiC power semiconductor module techniques and its industry applications
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Project
Research of advanced system simulation for Power Electronics and it's applications
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Project
Development of Next-Generation Power Electronics Technology Based on Advanced Magnetic Application and Modeling Techniques and Its Industry Applications
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Project
Study on electrical insulation for high-reliable and low-loss power semiconductor module
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Project
Research of electronics packaging technologies for GaN and SiC power semiconductor module and its industry applications
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Project
Research of high efficiency electric power conversion circuit using GaN Semiconductor Devices
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Project
Analysis and optimization of the behavior of GaN devices used in power electronic circuits
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Project
High Frequency Wireless Power Conversion Circuit using GaN Semiconductor Devices
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Visiting Professor
ITO, Akira
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Visiting Professor
SATO, Shinji
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Visiting Professor
SHOYAMA, Masahito
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Visiting Professor
CHIU, Huangjen
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Visiting Professor
NISHIMURA, Kazunori
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Visiting Professor
HOSOTANI, Tatsuya
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Visiting Associate Professor
ISHIKURA, Yuki
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Visiting Associate Professor
UMETANI, Kazuhiro
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Visiting Associate Professor
KURODA, Naotaka
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Visiting Associate Professor
MASUZAWA, Takashi
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Visiting Associate Professor
MASUDA, Mitsuru
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Visiting Associate Professor
MUKAIYAMA, Daisaku
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Visiting Associate Professor
MOSTAFA, Noah
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Visiting Associate Professor
LESAGE-LANDRY, Antoine
RF Circuits
RF circuits group conducts researches of new circuit technology and the basic performance improvement of the elementary devices, aiming for micro- and millimeter-wave applications such as wireless energy transfer, next generation wireless communication systems, etc. By taking full advantages of gallium nitride (GaN) devices, we aim to dramatically reduce the energy consumptions and contribute to the realization of the society coping both convenience and sustainability.
Member
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Project
Circuit design technologies using GaN for microwave & millimeter-wave applications
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Researcher
SAKUNO, Keiichi
Project
Circuit design technologies using GaN for microwave & millimeter-wave applications
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Researcher
SUEMATSU, Eiji
Project
GaN circuit design technology in millimeter-wave & terahertz band
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Researcher
TANBA, Noriyuki
Project
Circuit design technologies using GaN for microwave & millimeter-wave applications
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Visiting Faculty
MIZOJIRI, Sei
International Research Section
The International Research Section engages in research and development activities together with visiting professors invited from overseas. Additionally, the Section is cultivating an international research network as part of efforts to form a central venue for nitride semiconductor research.
New Approaches on III-Nitrides (Pristovsek Lab.)
New Approaches on III-Nitrides
Future devices needs further III-Nitride semiconductor development, to go beyond the limits set by the current materials. New approaches like N-polar surface and new material like AlPN are explored which to achieve a device performance not possible using conventional approaches.
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- Reciprocal space map using high-resolution X-ray diffraction to estimate the basal plane stacking fault density on （10-13） GaN crystals for green LEDs
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- Orientation of single phase （10-13） AlN on sapphire produced by directional sputtering and high-temperature annealing.
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- Atomic force microscope images of （10-10） AlN films prepared by metal-organic vapour phase epitaxy with three different nucleation times and annealed at different temperatures. Numbers indicate roughness in nanometer.
Member
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Project
Next generation of III-Nitride devices by a better understanding of crystal growth
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Project
New AlPN/GaN semiconductor heterojunctions for better GaN based electronics
New Device Development
Member
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Visiting Professor
OTOKI, Yohei
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Visiting Professor
GRAHAM Samuel
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Visiting Professor
SCHOWALTER, Leo John
Project
Research and development of application and innovative devices of single crystal aluminum nitride
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Visiting Professor
XING, Huili Grace
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Visiting Professor
SUBRAMANIAM, Arul Kumaran
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Visiting Professor
BOĆKOWSKI, Michał Stanisław
Research Strategy and Joint Research Promotion Department
This organization was established to build a network as a co-creation platform for studying wide bandgap and ultra-wide bandgap semiconductor materials. And it is in charge of planning and managing projects to promote human resources exchange and joint research through the research network. This section is also provided a function secretariat of GaN research strategy office of Nagoya University.
Member
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Designated Professor
UESUGI, Tsutomu
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Designated Professor
HASHIZUME, Tamotsu
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Designated Professor
FUJITA, Shizuo
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Visiting Professor
CHOWDHURY, Srabanti
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