CIRFE

Organization

Center for Integrated Research
of Future Electronics

Center for Integrated Research of Future Electronics
Director of the Center

AMANO, Hiroshi

The Center for Integrated Research of Future Electronics (CIRFE), established in October 2015, engages in lead­ing-edge electronics research-including research in the un­traversed area of devices with gallium nitride, carbon nano­-tube, SiC and other post-silicon materials-while also cultivating top-notch human resources to lay the foundations of the future electronics industry. CIRFE is divided into six sections, each staffed with instructors who serve as leading spe­cialists in their field, and equipped with outstanding research infrastructure. The Center’s fully integrated joint research and education system covers everything from basic scientific education on materials, measuring, devices, and applied systems through to the completion of student educational courses. Through research on energy-saving devices, an area in which very little experimentation has been carried out anywhere in the world, CIRFE strives to foster well-trained human resources who will lead the field of manufacturing in the twenty-first century.

CIRFE

  • Director of the Center

    AMANO, Hiroshi

  • Vice-director of the Center

    IKARASHI, Nobuyuki

Movie

CIRFE Introduction video

  • Amplify the passion for the future(2min.40sec.)

  • Short version(2min.)

  • Long version(12min.40sec.)

Section / Group

Device Innovation Section

The Device Innovation Section aims to develop devices with new functions by establishing new crystal-growth methods and process development for cutting-edge electronics materials with a central focus on wide-bandgap semiconductors, such as gallium nitride and silicon carbide, and nanocarbon materials. A fully integrated research approach enables us to establish a unified process from crystal growth to device design, manufacturing, and assessment.

Prototype of Blue LED

 

  • Crystal Growth (Amano Lab.)

  • Nanomaterial devices (Ohno Lab.)

  • Energy Conversion Device (Usami Lab.)

  • Semiconductor Engineering And Integration-science (Miyazaki Lab.)

Crystal Growth

To realize gallium nitride semiconductor devices that will serve as the foundation of next-generation electronics, we carry out a wide variety of research from the growth of bulk crystals for use as substrates free of killer defects to the growth and processing of next-generation quantum structures and nanostructures.

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Member

  • Director of CIRFE, Professor

    AMANO, Hiroshi
    Project

    Generation of noble nitride-based devices and their contribution to the development of new infrastructure

  • Professor

    HONDA, Yoshio
    Project

    Creation of sophisticated devices based on Nitride semiconductor

  • Designated Professor

    SASAOKA, Chiaki
    Project

    Study on nitride semiconductor crystal and devices

  • Designated Associate Professor

    TANAKA, Atsushi
    Project

    Creation of Next-Generation GaN Power Devices

  • Designated Associate Professor

    TOMIDA, Daisuke
    Project

    Development of fabricating process of nitride crystals using supercritical ammonia

  • Designated Associate Professor

    NITTA, Shugo
    Project

    Study on innovative nitride semiconductor crystal growth technique and future devices

  • Assistant Professor

    CHEONG, Heajeong
    Project

    Development of Micro-LEDs using Nitride semiconductor

  • Designated Assistant Professor《Institute for Advanced Research》

    WANG, Jia
    Project

    Novel doping technology of nitride semiconductors and development of related devices

  • Researcher

    CAI, Wentao
    Project

    Development of Nitride semiconductor epitaxy and high-efficiency red-emitting Micro-LED devices

  • Researcher

    FUJIMOTO, Naoki
    Project

    Research of growth technology of high quality GaN bulk crystal

  • Researcher

    FURUSAWA, Yuta
    Project

    Study on crystal growth and device function of wide bandgap semiconductor (BAlGaInN)

  • Researcher

    WATANABE, Hirotaka
    Project

    High quality nitride semiconductor crystal growth for future devices

  • Researcher

    WANG, Haitao
    Project

    Study on Novel Electronic Devices Based on Nitride Semiconductors and Characterization of Interface Properties

  • Visiting Professor

    OTA, Koichi
  • Visiting Professor

    MATSUMOTO, Koh
  • Visiting Professor

    MUTO, Hirotaka
  • Visiting Professor

    WAKEJIMA, Akio
  • Visiting Associate Professor

    NISHITANI, Tomohiro
  • Visiting Faculty

    KORAI, Takao

Surface/Interface

The materials used for power devices, solar batteries, LEDs, ceramics, and superconductors that help solve environmental and energy problems, as well as proteins required for drug development analysis, have crystal structures. By increasing our understanding and utilization of crystal growth, we aim to develop various materials that may change the world and produce materials that we have never encountered before.

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Member

  • Professor

    UJIHARA, Toru
    Project

    Study on a novel processes based on crystal growth theory for high-quality crystal of functional materials (SiC, AlN, etc.)

  • Associate Professor

    KUTSUKAKE, Kentaro
    Project

    Application of information science to crystal engineering

  • Associate Professor

    HARADA, Shunta
    Project

    Control of defects in crystalline materials

  • Designated Assistant Professor

    LIU, Xin
    Project

    Multi-scale modeling and optimization for the solution growth of the SiC crystal

  • Researcher

    TAKAHASHI, Kousei
    Project

    The development of an automatic defect inspection algorithm for semiconductor wafers

  • Researcher

    MATSUBARA, Yasutaka
    Project

    Simulations of dislocation contrasts in birefringence image considering photoelastic effect in SiC wafers

  • Visiting Professor

    UDA, Satoshi
  • Visiting Professor

    KAMEI, Kazuhito
  • Visiting Professor

    KOJIMA, Kazutoshi
  • Visiting Professor

    SUZUKI, Atsushi
  • Visiting Professor

    TSUKAMOTO, Katsuo
  • Visiting Professor

    FURUSHO, Tomoaki
  • Visiting Professor

    YONEZAWA, Yoshiyuki
  • Visiting Associate Professor

    SEKI, Kazuaki
  • Visiting Associate Professor

    MITANI, Takeshi
  • Visiting Faculty

    KURASHIGE, Kazuhisa

Nanomaterial devices

Aiming at the creation of future electronics with affinity for human beings,we are striving to realize electronic devices that are transparent and flexible,taking advantage of the characteristics of nanomaterials such as carbon nanotubes. We will realize wearable healthcare devices that can be placed in direct contact with soft tissue of the human body.

 

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Member

  • Professor

    OHNO, Yutaka
    Project

    Development of energy-saving advanced electron devices based on nano-carbon materials

  • Assistant Professor

    MATSUNAGA, Masahiro
    Project

    Energy harvester based on nano carbon materials

  • Visiting Faculty

    OMACHI, Haruka
  • Researcher

    AJI Adha sukma

Energy Conversion Device

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Member

  • Professor

    USAMI, Noritaka
    Project

    Advanced photovoltaic cells with earth-abundant materials

Advanced Device

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Member

  • Professor

    SUDA, Jun
    Project

    GaN Power Devices

  • Associate Professor

    HORITA, Masahiro
    Project

    Characterization of material properties of wide bandgap semiconductors

  • Designated Professor

    ANDO, Yuji
    Project

    GaN RF Devices

Nanoelectronic Device

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Member

  • Professor

    NAKATSUKA, Osamu
    Project

    Research and development of thin film and interface engineering technologies of group-IV semiconductors for low-power consumption nanoelectronic devices

Semiconductor Engineering and Integration Science

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Member

  • Professor

    MAKIHARA, Katsunori
    Project

    Study on Materials Processing and Characterization for Advanced Electron Devices

Multiphysics Simulation Section

The Multiphysics Simulation Section is engaged in research with the aim of realizing multiphysical-system-based predictable crystal-growth simulations that integrate first-principles calculation with macroscopic fluid dynamics via thermodynamic analysis. Additionally,this section is pursuing proposals for new gallium-nitride-based power devices.

 

Frontier Computational Material Science (Shiraishi Lab.)

Frontier Computational Material Science

Crystal growth process clarified by the multi-physics simulation.

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Member

  • Professor

    SHIRAISHI, Kenji
    Project

    Computational Studies on Semiconductor Crystal Growth

  • Associate Professor

    YOSHIMATSU, Katsunori
    Project

    Development of mathematical and data scientific methodology for fluid mechanics and its applications

  • Assistant Professor

    ARAIDAI, Masaaki
    Project

    First-Principles Study on Electronic Property of Surface and Interface

  • Researcher

    ZHAO, Yuansheng
    Project

    Material properties of gallium nitride form ab initio calculations

  • Visiting Professor

    OHNO, Takahisa
  • Visiting Associate Professor

    SEINO, Kaori

Materials Science based on Computics


Progress in materials science contributes to our life via the development of technology. To take advantage of recent amazing developments of computers for materials science, it is imperative to make interdisciplinary collaboration between physics and high-performance computing, that we call computics. We aim to forward the progress in science of power semiconductors and nanoscience based on the computics approach.

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Member

  • Designated Professor

    OSHIYAMA, Atsushi
    Project

    First-principle study on thin-film growth and surface/interface properties

  • Visiting Faculty

    BUI, Thi Kieu My

Materials Nano-Characterization Section

The Materials Nano-Characterization Section develops nanoscale operand analysis techniques for semiconductor devices under operating conditions using electron microscopy and electron holography.
These efforts are part of research centered on themes such as interface electronic properties involving direct measurement of device operations and electric-field response measurements for semiconductor interface electronic structures.

Nano-Electronic Materials (Ikarashi Lab.)

Nano-Electronic Materials

Direct electrostatic potential mapping in nano-scaled FET
under operation mode using electron holography

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Member

  • Vice-director of CIRFE, Professor

    IKARASHI, Nobuyuki
    Project

    Nano-science and advanced electron microscopy for device innovation

  • Associate Professor

    NAGAO, Masahiro
    Project

    Analysis of Magnetic Properties by Advanced Electron Microscopy toward the Development of New Devices

  • Assistant Professor

    KANO, Emi
    Project

    Advanced electron microscopy analysis of GaN and other nitride semiconductors

  • Professor Emeritus

    TANAKA, Nobuo

System Applications Section

In the area of devices utilizing cutting-edge electronics materials, this Section focuses on the integration of such devices into various systems and pursues applied research with an eye toward real-life applications throughout society.

 

  • Power Electronics (Yamamoto Lab.)

  • RF Circuits (Hara Lab.)

Power Electronics

For the purpose of realizing high-efficiency, small, and lightweight power converters and motors used in hybrid vehicles, electric vehicles, power infrastructures, and next-generation airclafts, we carry out applied research on power electronics technology by integrating fields related to power semiconductors, controlling technology, and magnetic applications.

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Member

  • Vice-Director of the Center / Professor

    YAMAMOTO, Masayoshi
    Project

    GaN and SiC power semiconductor module techniques and its industry applications

  • Designated Professor

    SHIGEMATSU, Koichi
    Project

    Research of advanced system simulation for Power Electronics and it's applications

  • Associate Professor

    IMAOKA, Jun
    Project

    Development of Next-Generation Power Electronics Technology Based on Advanced Magnetic Application and Modeling Techniques and Its Industry Applications

  • Associate Professor

    KURIMOTO, Muneaki
    Project

    Study on electrical insulation for high-reliable and low-loss power semiconductor module

  • Designated Associate Professor

    KAMIYA, Arihiro
    Project

    Research of electronics packaging technologies for GaN and SiC power semiconductor module and its industry applications

  • Designated Associate Professor

    YONEZAWA, Yu
    Project

    Research of high efficiency electric power conversion circuit using GaN Semiconductor Devices

  • Researcher

    ARAI, Daisuke
    Project

    Analysis and optimization of the behavior of GaN devices used in power electronic circuits

  • Researcher

    SENANAYAKE, Thilak Ananda
    Project

    High Frequency Wireless Power Conversion Circuit using GaN Semiconductor Devices

  • Visiting Professor

    ITO, Akira
  • Visiting Professor

    SATO, Shinji
  • Visiting Professor

    SHOYAMA, Masahito
  • Visiting Professor

    CHIU, Huangjen
  • Visiting Professor

    NISHIMURA, Kazunori
  • Visiting Professor

    HOSOTANI, Tatsuya
  • Visiting Associate Professor

    ISHIKURA, Yuki
  • Visiting Associate Professor

    UMETANI, Kazuhiro
  • Visiting Associate Professor

    KURODA, Naotaka
  • Visiting Associate Professor

    MASUZAWA, Takashi
  • Visiting Associate Professor

    MASUDA, Mitsuru
  • Visiting Associate Professor

    MUKAIYAMA, Daisaku
  • Visiting Associate Professor

    MOSTAFA, Noah
  • Visiting Associate Professor

    LESAGE-LANDRY, Antoine

RF Circuits

RF circuits group conducts researches of new circuit technology and the basic performance improvement of the elementary devices, aiming for micro- and millimeter-wave applications such as wireless energy transfer, next generation wireless communication systems, etc. By taking full advantages of gallium nitride (GaN) devices, we aim to dramatically reduce the energy consumptions and contribute to the realization of the society coping both convenience and sustainability.

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Member

  • Designated Professor

    HARA, Shinji
    Project

    Circuit design technologies using GaN for microwave & millimeter-wave applications

  • Researcher

    SAKUNO, Keiichi
    Project

    Circuit design technologies using GaN for microwave & millimeter-wave applications

  • 末松 英治 研究員

    Researcher

    SUEMATSU, Eiji
    Project

    GaN circuit design technology in millimeter-wave & terahertz band

  • Researcher

    TANBA, Noriyuki
    Project

    Circuit design technologies using GaN for microwave & millimeter-wave applications

  • Visiting Faculty

    MIZOJIRI, Sei

International Research Section

  The International Research Section engages in research and development activities together with visiting professors invited from overseas. Additionally, the Section is cultivating an international research network as part of efforts to form a central venue for nitride semiconductor research.

New Approaches on III-Nitrides (Pristovsek Lab.)

New Approaches on III-Nitrides

  Future devices needs further III-Nitride semiconductor development, to go beyond the limits set by the current materials. New approaches like N-polar surface and new material like AlPN are explored which to achieve a device performance not possible using conventional approaches.

 

 

 

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Member

  • Designated Professor

    PRISTOVSEK, Markus
    Project

    Next generation of III-Nitride devices by a better understanding of crystal growth

  • Designated Assistant Professor

    YANG, Xu
    Project

    New AlPN/GaN semiconductor heterojunctions for better GaN based electronics

New Device Development

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Member

  • Visiting Professor

    OTOKI, Yohei
  • Visiting Professor

    GRAHAM Samuel
  • Visiting Professor

    SCHOWALTER, Leo John
    Project

    Research and development of application and innovative devices of single crystal aluminum nitride

  • Visiting Professor

    XING, Huili Grace
  • Visiting Professor

    SUBRAMANIAM, Arul Kumaran
  • Visiting Professor

    SEONG, Tae-Yeon
  • Visiting Professor

    BOĆKOWSKI, Michał Stanisław

Research Strategy and Joint Research Promotion Department

This organization was established to build a network as a co-creation platform for studying wide bandgap and ultra-wide bandgap semiconductor materials. And it is in charge of planning and managing projects to promote human resources exchange and joint research through the research network. This section is also provided a function secretariat of GaN research strategy office of Nagoya University.

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Member

  • Professor

    SUDA, Jun
  • Designated Professor

    ARAI, Manabu
  • Designated Professor

    UESUGI, Tsutomu
  • Designated Professor

    KACHI, Tetsu
  • Designated Professor

    SASAOKA, Chiaki
  • Designated Professor

    HASHIZUME, Tamotsu
  • Designated Professor

    FUJITA, Shizuo
  • Designated Professor

    ANDO, Yuji
  • Visiting Professor

    CHOWDHURY, Srabanti
  • Designated Supervising Research Administrator

    MIZUNO, Koichi
  • Designated Supervising Research Administrator

    FUJIMOTO, Hiromasa
  • Lead Research Administrator

    WATANABE, Toyoyuki