TOYOTA CENTRAL R&D LABS GaN Power Device Industry-Academia Collaborative Chair
In order to realize GaN power devices, we research the following:
①Epitaxial growth with precise control of impurities and point defects
②Gate insulators and MOS interfaces
③Process technologies, such as low-damage etching and ion implantation
④Device design for very low loss
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- Fig.1 A Vertical trench GaN device
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- Fig.2 Hall mobility in our n-type low-doping epi-layer
