MITSUBISHI CHEMICAL GaN Substrate Devices Industry-Academia Collaborative Chair is engaged in the research and development of high-quality gallium nitride (GaN) substrates that serve as the foundation of new device structures exploiting the excellent properties of GaN, focusing on the following themes.

・Investigation of the correlation between substrate quality (e.g., crystal defects, impurities) and device characteristics, as well as elucidation of the mechanism underlying the correlation
・Clarification of the quality and characteristics required for GaN substrates for new devices