IACC

Organization

Industry–Academia
Collaborative Chair

Section / Group

AIST-NU GaN Advanced Device Open Innovation Laboratory

Our laboratory covers the research area from materials science to application of nitride semiconductors. To function as a bridge between research and industry, we purposely examine basic research, and expedite connecting research results to practical use.

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Member

  • Designated Professor

    SHIMIZU, Mitsuaki
    Project

    GaN power electronics

  • Designated Professor

    WANG, Xuelun
    Project

    Optical devices

MIRISE Technologies Advanced Power Electronics Industry-Academia Collaborative Chair

    To achieve a sustainable society that ensures a positive symbiotic relationship between humans and Earth, the funded division researches power electronics technologies for future mobility. The division researches and develops material technologies, device technologies, and system applications of wide-bandgap semiconductors with a wide perspective, contributing to the realization of the sustainable society as well as nurturing young researchers for the next generation.

 

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Member

  • Designated Professor

    UESUGI, Tsutomu
    Project

    Research of Fabrication Process and Device Structure of GaN Power Devices

  • Designated Professor

    ONDA, Shoichi
    Project

    Development of Crystal growth of the next-generation power-semiconductor materials

  • Designated Associate Professor

    KOJIMA, Jun
    Project

    Research of quality improvements and cost-reduced technologies of the next-generation power semiconductor crystals

  • Designated Associate Professor

    KIDA, Hirofumi
    Project

    Research of Fabrication Process and Device Structure of GaN Power Devices

TOYODA-GOSEI GaN Leading Innovative R&D Industry-Academia Collaborative Chair

In 1986, Toyoda Gosei Co., Ltd., started a joint research project with Professor Akasaki, Professor Amano, and Toyota Central R&D Labs., Inc., and began fundamental research on GaN materials. The commercialization of LEDs and their subsequent widespread adoption were based on this research. The core competencies cultivated from research, commercialization, expansion, and continuation will be utilized to create new business opportunities.

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Member

  • Designated Professor

    OKA, Tohru
    Project

    Research on applications of GaN power devices

  • Designated Associate Professor

    USHIDA, Yasuhisa
    Project

    Research of GaN to new product development

  • Designated Assistant Professor

    SUMIYA, Kengo
    Project

    Development of wireless power transmission system

  • Visiting Professor

    FUKUSHIMA, Hideoki

AsahiKASEI Innovative Devices Industry-Academia Collaborative Chair

AsahiKASEI Innovative Devices IA Collaborative Chair exploit our high-quality AlN single-crystal substrate technology, exploratory research into novel devices, and applications to create new business opportunities.

2-inch, single-crystal AlN substrate

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Member

  • Designated Professor

    SCHOWALTER, Leo John
    Project

    Research and development of application and innovative devices of single crystal aluminum nitride

  • Designated Associate Professor

    YOSHIKAWA, Akira
    Project

    Research and development of thin film growth technology for wide band gap semiconductor devices

  • Designated Assistant Professor

    ZHANG, Ziyi
    Project

    Research and development of UV-light emitting devices of nitride semiconductor

TOYOTA CENTRAL R&D LABS GaN Power Device Industry-Academia Collaborative Chair

In order to realize GaN power devices, we research the following:
①epitaxial growth with precise control of impurities and point defects
②gate insulators and MOS interfaces
③process technologies, such as low-damage etching and ion implantation
④device design for very low loss

 

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Member

  • Designated Professor

    TOMITA, Kazuyoshi
    Project

    High-quality epitaxial growth for GaN power devices

  • Designated Professor

    KANECHIKA, Masakazu
    Project

    Process technology and device design and evaluation for GaN power devices

MITSUBISHI CHEMICAL GaN Substrate Devices Industry-Academia Collaborative Chair

MITSUBISHI CHEMICAL GaN Substrate Devices Industry-Academia Collaborative Chair is engaged in the research and development of high-quality gallium nitride (GaN) substrates that serve as the foundation of new device structures exploiting the excellent properties of GaN, focusing on the following themes.
・Investigation of the correlation between substrate quality (e.g., crystal defects, impurities) and device characteristics, as well as elucidation of the mechanism underlying the correlation
・Clarification of the quality and characteristics required for GaN substrates for new devices

GaN substrate for new devices

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Member

  • ISO, Kenji

    Designated Professor

    ISO, Kenji
    Project

    Research and development of high-quality GaN substrates for high-performance semiconductor devices

  • 三浦 輝紀

    Designated Assistant Professor

    MIURA, Akinori
    Project

    Characterization of semiconductor devices on high-quality GaN substrates

Photo electron Soul / Nagoya University, Joint Lab. of GaN e-beam Device

    Photo electron Soul Inc. is the only company in the world that supplies semiconductor photocathode e-beam systems for industrial use. In our joint laboratry, we are researching GaN-based semiconductors as e-beam devices. Through this activity, we are accelerating the spread of GaN e-beam devices, which is a new application of GaN-based semiconductors, in industry.

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Member

  • Designated Lecturer

    SHIKANO, Haruka
    Project

    R&D of GaN-based semiconductors as e-beam devices

  • Designated Assistant Professor

    SATO, Daiki
    Project

    R&D of GaN-based semiconductors as e-beam devices