IACC

Organization

Industry–Academia
Collaborative Chair

Section / Group

AIST-NU GaN Advanced Device Open Innovation Laboratory

Our laboratory covers the research area from materials science to application of nitride semiconductors. To function as a bridge between research and industry, we purposely examine basic research, and expedite connecting research results to practical use.

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Member

  • Designated Professor

    SHIMIZU, Mitsuaki
    Project

    GaN power electronics

  • Designated Professor

    WANG, Xuelun
    Project

    Optical devices

Toyota Advanced Power Electronics Industry-Academia Collaborative Chair

Toward the realization of gallium nitride power semiconductor devices, this division researches and develops following new techniques:
1. Processing techniques that will enable the controllability of defects, impurities and damages with high accuracy
2. Device design technology for low-loss and high-switching devices
3. System applications using new gallium nitride power devices with high-performance

 

Design of vertical GaN-MOSFET structure

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Member

  • Designated Professor

    UESUGI, Tsutomu
    Project

    Research of Fabrication Process and Device Structure of GaN Power Devices

DENSO Automotive Power Electronics Industry-Academia Collaborative Chair

DENSO Automotive Power Electronics Industry‒Academia Collaborative Chair is looking into the future of high-power, high-frequency, and high-efficiency electric drive systems for HVs, EVs, and FCVs, and promoting exploratory research into next-generation power semiconductor materials, devices, and application systems

Characteristics and applications of next-generation power semiconductor

Characteristics and applications of next-generation power semiconductor

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Member

  • Designated Professor

    ONDA, Shoichi
    Project

    Development of Crystal growth of the next-generation power-semiconductor materials

  • Designated Associate Professor

    KOJIMA, Jun
    Project

    Research of quality improvements and cost-reduced technologies of the next-generation power semiconductor crystals

TOYODA-GOSEI GaN Leading Innovative R&D Industry-Academia Collaborative Chair

In 1986, Toyoda Gosei Co., Ltd., started a joint research project with Professor Akasaki, Professor Amano, and Toyota Central R&D Labs., Inc., and began fundamental research on GaN materials. The commercialization of LEDs and their subsequent widespread adoption were based on this research. The core competencies cultivated from research, commercialization, expansion, and continuation will be utilized to create new business opportunities.

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Member

  • Designated Professor

    OKA, Toru
    Project

    Research on applications of GaN power devices

  • Designated Associate Professor

    USHIDA, Yasuhisa
    Project

    Research of GaN to new product development

  • Designated Assistant Professor

    SUMIYA, Kengo
    Project

    Development of wireless power transmission system

  • Visiting Professor

    FUKUSHIMA, Hideoki

AsahiKASEI Innovative Devices Industry-Academia Collaborative Chair

AsahiKASEI Innovative Devices IA Collaborative Chair exploit our high-quality AlN single-crystal substrate technology, exploratory research into novel devices, and applications to create new business opportunities.

2-inch, single-crystal AlN substrate

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Member

  • Designated Professor

    SCHOWALTER, Leo John
    Project

    Research and development of application and innovative devices of single crystal aluminum nitride

  • Designated Associate Professor

    YOSHIKAWA, Akira
    Project

    Research and development of thin film growth technology for wide band gap semiconductor devices

  • Designated Assistant Professor

    ZHANG, Ziyi
    Project

    Research and development of UV-light emitting devices of nitride semiconductor

TOYOTA CENTRAL R&D LABS GaN Power Device Industry-Academia Collaborative Chair

In order to realize GaN power devices, we research the following:
①epitaxial growth with precise control of impurities and point defects
②gate insulators and MOS interfaces
③process technologies, such as low-damage etching and ion implantation
④device design for very low loss

 

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Member

  • Designated Professor

    TOMITA, Kazuyoshi
    Project

    High-quality epitaxial growth for GaN power devices

  • Designated Professor

    KANECHIKA, Masakazu
    Project

    Process technology and device design and evaluation for GaN power devices

MITSUBISHI CHEMICAL GaN Substrate Devices Industry-Academia Collaborative Chair

MITSUBISHI CHEMICAL GaN Substrate Devices Industry-Academia Collaborative Chair is engaged in the research and development of high-quality gallium nitride (GaN) substrates that serve as the foundation of new device structures exploiting the excellent properties of GaN, focusing on the following themes.
・Investigation of the correlation between substrate quality (e.g., crystal defects, impurities) and device characteristics, as well as elucidation of the mechanism underlying the correlation
・Clarification of the quality and characteristics required for GaN substrates for new devices

GaN substrate for new devices

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Member

  • ISO, Kenji

    Designated Professor

    ISO, Kenji
    Project

    Research and development of high-quality GaN substrates for high-performance semiconductor devices

  • 三浦 輝紀

    Designated Assistant Professor

    MIURA, Akinori
    Project

    Characterization of semiconductor devices on high-quality GaN substrates

Rohm Multi-Scale Power System Simulation Industry-Academia Collaborative Chair

Rohm Multi-Scale Power System Simulation Industry-Academia Collaborative Chair is realizing system-optimized device design with integrated simulation technology and without any prototypes.

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Member

  • Designated Lecturer

    UMEGAMI, Hirokatsu
    Project

    Development of device model for EV powertrain simulation

  • Designated Lecturer

    YAMAGUCHI, Atsushi
    Project

    Development of device model for EV powertrain simulation