Gallium nitride (GaN)
GaN is a chemical compound of gallium (Ga) and nitrogen (N). GaN was developed as the material of blue LEDs. It has a high breakdown field strength and saturation speed of electrons. Research on GaN has recently been active because GaN is expected to be used in next-generation low-loss, high-efficiency, energy-saving power devices.
Power devices are semiconductor devices used to convert voltage and frequency to control motors during the generation, transmission, and consumption of power (electric energy). They are used in various applications such as for power generation and transmission in substations, hybrid/electric vehicles, trains, and domestic appliances.
Si is a single-crystal material that plays an indispensable role in many electric appliances supporting our lives, such as personal computers, televisions, and smartphones, and in social infrastructure, such as traffic and communication systems. It is widely known as a semiconductor.
Silicon carbide (SiC)
Research on the peripheral technology of SiC, in addition to that of GaN, which are used as semiconducting materials in next-generation power devices, is under way. Compared with conventional Si devices, SiC devices with a higher voltage tolerance and low loss can be fabricated, making them advantageous for high-voltage-tolerance and large-current applications such as those driven by motors.