{"id":532,"date":"2021-04-12T16:37:17","date_gmt":"2021-04-12T07:37:17","guid":{"rendered":"http:\/\/imassnagoya-u-acjp.check-xserver.jp\/wp\/?post_type=organization&#038;p=532"},"modified":"2026-05-15T16:56:46","modified_gmt":"2026-05-15T07:56:46","slug":"532-2","status":"publish","type":"organization","link":"https:\/\/www.imass.nagoya-u.ac.jp\/en\/organization\/532-2","title":{"rendered":"TOYOTA CENTRAL R&#038;D LABS GaN Power Device Industry-Academia Collaborative Chair"},"content":{"rendered":"<div id=\"attachment_11380\" style=\"width: 328px\"  class=\"wp-caption aligncenter\"><a href=\"https:\/\/www.imass.nagoya-u.ac.jp\/wp\/wp-content\/uploads\/2026\/05\/44_poster_TOYOTA_centra.pdf\" target=\"_blank\" rel=\"noopener\"><img loading=\"lazy\" decoding=\"async\" src=\"https:\/\/www.imass.nagoya-u.ac.jp\/wp\/wp-content\/uploads\/2026\/05\/44_poster_TOYOTA_central.jpg\" alt=\"\" width=\"318\" height=\"450\" class=\"wp-image-11380 size-full\" srcset=\"https:\/\/www.imass.nagoya-u.ac.jp\/wp\/wp-content\/uploads\/2026\/05\/44_poster_TOYOTA_central.jpg 318w, https:\/\/www.imass.nagoya-u.ac.jp\/wp\/wp-content\/uploads\/2026\/05\/44_poster_TOYOTA_central-212x300.jpg 212w\" sizes=\"auto, (max-width: 318px) 100vw, 318px\" \/><\/a><p class=\"wp-caption-text\"><strong><span style=\"font-size: 16px;\">TOYOTA CENTRAL R&D LABS GaN Power Device Industry-Academia Collaborative Chair<\/span><\/strong><\/p><\/div>\r\n<p>&nbsp;<\/p>\r\n<p>In order to realize GaN power devices, we research the following:<br>\u2460Epitaxial growth with precise control of impurities and point defects<br>\u2461Gate insulators and MOS interfaces<br>\u2462Process technologies, such as low-damage etching and ion implantation<br>\u2463Device design for very low loss<\/p>\r\n<p>&nbsp;<\/p>\r\n<div id='gallery-1' class='gallery galleryid-532 gallery-columns-2 gallery-size-full'><dl class='gallery-item'>\r\n\t\t\t<dt class='gallery-icon landscape'>\r\n\t\t\t\t<img loading=\"lazy\" decoding=\"async\" width=\"1049\" height=\"842\" src=\"https:\/\/www.imass.nagoya-u.ac.jp\/wp\/wp-content\/uploads\/2021\/05\/soshiki_sangaku_g3-1.jpg\" class=\"attachment-full size-full\" alt=\"\u7e26\u578b\u30c8\u30ec\u30f3\u30c1GaN\u30c7\u30d0\u30a4\u30b9\" aria-describedby=\"gallery-1-2189\" srcset=\"https:\/\/www.imass.nagoya-u.ac.jp\/wp\/wp-content\/uploads\/2021\/05\/soshiki_sangaku_g3-1.jpg 1049w, https:\/\/www.imass.nagoya-u.ac.jp\/wp\/wp-content\/uploads\/2021\/05\/soshiki_sangaku_g3-1-300x241.jpg 300w, https:\/\/www.imass.nagoya-u.ac.jp\/wp\/wp-content\/uploads\/2021\/05\/soshiki_sangaku_g3-1-1024x822.jpg 1024w, https:\/\/www.imass.nagoya-u.ac.jp\/wp\/wp-content\/uploads\/2021\/05\/soshiki_sangaku_g3-1-768x616.jpg 768w\" sizes=\"auto, (max-width: 1049px) 100vw, 1049px\" \/>\r\n\t\t\t<\/dt>\r\n\t\t\t\t<dd class='wp-caption-text gallery-caption' id='gallery-1-2189'>\r\n\t\t\t\tFig.1 A Vertical trench GaN device\r\n\t\t\t\t<\/dd><\/dl><dl class='gallery-item'>\r\n\t\t\t<dt class='gallery-icon landscape'>\r\n\t\t\t\t<img loading=\"lazy\" decoding=\"async\" width=\"1067\" height=\"829\" src=\"https:\/\/www.imass.nagoya-u.ac.jp\/wp\/wp-content\/uploads\/2021\/05\/soshiki_sangaku_g3-2.jpg\" class=\"attachment-full size-full\" alt=\"N\u578b\u4f4e\u6fc3\u5ea6\u30a8\u30d4\u306e\u30db\u30fc\u30eb\u79fb\u52d5\u5ea6\" aria-describedby=\"gallery-1-2190\" srcset=\"https:\/\/www.imass.nagoya-u.ac.jp\/wp\/wp-content\/uploads\/2021\/05\/soshiki_sangaku_g3-2.jpg 1067w, https:\/\/www.imass.nagoya-u.ac.jp\/wp\/wp-content\/uploads\/2021\/05\/soshiki_sangaku_g3-2-300x233.jpg 300w, https:\/\/www.imass.nagoya-u.ac.jp\/wp\/wp-content\/uploads\/2021\/05\/soshiki_sangaku_g3-2-1024x796.jpg 1024w, https:\/\/www.imass.nagoya-u.ac.jp\/wp\/wp-content\/uploads\/2021\/05\/soshiki_sangaku_g3-2-768x597.jpg 768w\" sizes=\"auto, (max-width: 1067px) 100vw, 1067px\" \/>\r\n\t\t\t<\/dt>\r\n\t\t\t\t<dd class='wp-caption-text gallery-caption' id='gallery-1-2190'>\r\n\t\t\t\tFig.2 Hall mobility in our n-type low-doping epi-layer\r\n\t\t\t\t<\/dd><\/dl><br style=\"clear: both\" \/><\/div>\n","protected":false},"parent":0,"template":"","organization_cat":[48],"class_list":["post-532","organization","type-organization","status-publish","hentry","organization_cat-iacc"],"acf":[],"aioseo_notices":[],"publishpress_future_action":{"enabled":false,"date":"2026-05-25 04:27:52","action":"change-status","newStatus":"draft","terms":[],"taxonomy":"organization_cat","extraData":[]},"publishpress_future_workflow_manual_trigger":{"enabledWorkflows":[]},"_links":{"self":[{"href":"https:\/\/www.imass.nagoya-u.ac.jp\/en\/wp-json\/wp\/v2\/organization\/532","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.imass.nagoya-u.ac.jp\/en\/wp-json\/wp\/v2\/organization"}],"about":[{"href":"https:\/\/www.imass.nagoya-u.ac.jp\/en\/wp-json\/wp\/v2\/types\/organization"}],"wp:attachment":[{"href":"https:\/\/www.imass.nagoya-u.ac.jp\/en\/wp-json\/wp\/v2\/media?parent=532"}],"wp:term":[{"taxonomy":"organization_cat","embeddable":true,"href":"https:\/\/www.imass.nagoya-u.ac.jp\/en\/wp-json\/wp\/v2\/organization_cat?post=532"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}