Center for Integrated Research of Future Electronics

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Center for Integrated Research of Future Electronics

The Center for Integrated Research of Future Electronics (CIRFE), established in October 2015, engages in lead­ing-edge electronics research-including research in the un­traversed area of devices with gallium nitride, carbon nano­-tube, SiC and other post-silicon materials-while also cultivating top-notch human resources to lay the foundations of the future electronics industry. CIRFE is divided into seven sections, each staffed with instructors who serve as leading spe­cialists in their field, and equipped with outstanding research infrastructure. The Center's fully integrated joint research and education system covers everything from basic scientific education on materials, measuring, devices, and applied systems through to the completion of student educational courses. Through research on energy-saving devices, an area in which very little experimentation has been carried out anywhere in the world, CIRFE strives to foster well-trained human resources who will lead the field of manufacturing in the twenty-first century.

Introduction video of the CIRFE

Short version (2 min.)
Long version (12 min. 32 sec.)

Device Innovation Section

The Device Innovation Section aims to develop devices with new functions by establishing new crystal-growth methods and process development for cutting-edge electronics materials with a central focus on wide-bandgap semiconductors, such as gallium nitride and silicon carbide, and nanocarbon materials. A fully integrated research approach enables us to establish a unified process from crystal growth to device design, manufacturing, and assessment.

Device Innovation Section

Prototype of Blue LED

Crystal Growth
To realize gallium nitride semiconductor devices that will serve as the foundation of next-generation electronics, we carry out a wide variety of research from the growth of bulk crystals for use as substrates free of killer defects to the growth and processing of next-generation quantum structures and nanostructures.
結晶成長01
結晶成長02
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AMANO, Hiroshi
Professor
AMANO, Hiroshi Lab
Director of the Center
Project :
Generation of noble nitride-based devices and their contribution to the development of new infrastructure
KUMAGAI, Yoshinao
Designated Professor
Project :
Investigation of vapor phase epitaxy of high-purity GaN bulk crystal
SASAOKA, Chiaki
Designated Professor
Project :
Study on nitride semiconductor crystal and devices
HONDA, Yoshio
Associate Professor
Project :
Creation of sophisticated devices based on Nitride semiconductor
TOMIDA, Daisuke
Designated Associate Professor
Project :
Development of fabricating process of nitride crystals using supercritical ammonia
NITTA, Shugo
Designated Associate Professor
Project :
Creation of innovative nitride semiconductor crystal growth technique and future devices
SENA, Hadi
Researcher
SENA, Hadi Lab
Project :
Development of ultra-thin GaN (substrates, processes and devices) using laser for post 5G
FUJIMOTO, Naoki
Researcher
FUJIMOTO, Naoki Lab
Project :
Research of growth technology of high quality GaN bulk crystal
FURUSAWA, Yuta
Researcher
FURUSAWA, Yuta Lab
Project :
Study on crystal growth and device function of wide bandgap semiconductor (BAlGaInN)
YE, Zheng
Researcher
YE, Zheng Lab
Project :
Growth mechanism and gas phase reaction on Nitride semiconductor MOVPE analyzed by high-resolution mass spectrometry
WATANABE, Hirotaka
Researcher
WATANABE, Hirotaka Lab
Project :
High quality nitride semiconductor crystal growth for future devices

Visiting Faculty

SUBRAMANIAM, Arulkumaran
Visiting Professor
Project :
III-Nitride Devices and its Circuits for High-Power Switching and Radiation Sensing
ISHIKAWA, Yukari
Visiting Professor
ISHIKAWA, Yukari
Project :
Development of defect detection methods for nitride semiconductor crystals
USUI, Akira
Visiting Professor
USUI, Akira
OTA, Koichi
Visiting Professor
OTA, Koichi
SUGA, Tadatomo
Visiting Professor
SUGA, Tadatomo
Project :
Interface Bonding Technology by Surface Activation Method
TADATOMO, Kazuyuki
Visiting Professor
TADATOMO, Kazuyuki
Project :
Research and Development of high quality GaN Substrate for Power Devices
CHICHIBU, Shigefusa F.
Visiting Professor
Project :
Temporally and spatially resolved luminescence studies on III-nitride semiconductors
NAKAMURA, Tohru
Visiting Professor
Project :
Ion implantation into GaN and its application to power devices
MATSUMOTO, Koh
Visiting Professor
MATSUMOTO, Koh
LIU, Yuhuai
Visiting Professor
Project :
Nitride Semiconductors-based Materials and Devices
ITO, Kenji
Visiting Associate Professor
ITO, Kenji Link
KATO, Masashi
Visiting Associate Professor
Project :
Defect characterization for nitride semiconductors by using electron-hole lifetime measurements
NAKAMURA, Daisuke
Visiting Associate Professor
NAKAMURA, Daisuke Link
NARITA, Tetsuo
Visiting Associate Professor
NARITA, Tetsuo Link
Project :
Program for research and development of next-generation semiconductor to realize energy-saving society
NISHITANI, Tomohiro
Visiting Associate Professor
NISHITANI, Tomohiro
MORIYAMA, Miki
Visiting Associate Professor
MORIYAMA, Miki
WAKEJIMA, Akio
Visiting Associate Professor
WAKEJIMA, Akio Lab
Project :
High Frequency GaN Transistors and Their Applications to Wireless Communication and Power Transfer
IIDA, Kazuyoshi
Visiting Faculty
IIDA, Kazuyoshi
IGASAKI, Yasunori
Visiting Faculty
IGASAKI, Yasunori
KAWAGUCHI, Daisuke
Visiting Faculty
KAWAGUCHI, Daisuke
KIMURA, Taishi
Visiting Faculty
KIMURA, Taishi
KORAI, Takao
Visiting Faculty
KORAI, Takao
WANI, Yotaro
Visiting Faculty
WANI, Yotaro
Surface/Interface
The materials used for power devices, solar batteries , LEDs, ceramics, and superconductors that help solve environmental and energy problems, as well as proteins required for drug development analysis, have crystal structures. By increasing our understanding and utilization of crystal growth, we aim to develop various materials that may change the world and produce materials that we have never encountered before.
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UJIHARA, Toru
Professor
UJIHARA, Toru
Vice-director of the Center
Project :
Study on a novel processes based on crystal growth theory for high-quality crystal of functional materials (SiC, AlN, etc.)
TAGAWA, Miho
Associate Professor
Project :
The Creation of Bio-inspired Novel Functionalized Nanomaterials
HARADA, Shunta
Associate Professor
Project :
Control of defects in crystalline materials
ZHU Can
Designated Assistant Professor
Project :
Bulk growth of high quality SiC crystal by solution method
TSUNOOKA, Yosuke
Researcher
TSUNOOKA, Yosuke
YU, Wancheng
Researcher
YU, Wancheng
YOKOMORI, Maasa
Researcher
YOKOMORI, Maasa

Visiting Faculty

TSUKAMOTO, Katsuo
Visiting Professor
TSUKAMOTO, Katsuo
SUYAMA, Akira
Visiting Professor
SUYAMA, Akira
YONEZAWA, Yoshiyuki
Visiting Professor
YONEZAWA, Yoshiyuki
KUTSUKAKE, Kentaro
Visiting Associate Professor
KUTSUKAKE, Kentaro Lab
Nanomaterial devices
Aiming at the creation of future electronics with affinity for human beings,we are striving to realize electronic devices that are transparent and flexible,taking advantage of the characteristics of nanomaterials such as carbon nanotubes. We will realize wearable healthcare devices that can be placed in direct contact with soft tissue of the human body.
Nanomaterial devices
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OHNO, Yutaka
Professor
Project :
Development of energy-saving advanced electron devices based on nano-carbon materials
Energy Conversion Device
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USAMI, Noritaka
Professor
Project :
Advanced photovoltaic cells with earth-abundant materials
Advanced Device
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SUDA, Jun
Professor
Project :
GaN Power Devices
HORITA, Masahiro
Associate Professor
Project:
Characterization of material properties of wide bandgap semiconductors
Nanoelectronic Device
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NAKATSUKA, Osamu
Professor
Project :
Research and development of thin film and interface engineering technologies of group-IV semiconductors for low-power consumption nanoelectronic devices
Semiconductor Engineering and Integration Science
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MIYAZAKI, Seiichi
Project :
Study on Materials Processing and Characterization for Advanced Electron Devices

Multiphysics Simulation Section

The Multiphysics Simulation Section is engaged in research with the aim of realizing multiphysical-system-based predictable crystal-growth simulations that integrate first-principles calculation with macroscopic fluid dynamics via thermodynamic analysis. Additionally,this section is pursuing proposals for new gallium-nitride-based power devices.

Frontier Computational Material Science
Multiphysics Simulation Section

Crystal growth process clarified by the multi-physics simulation.

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SHIRAISHI, Kenji
Professor
Project :
Computational Studies on Semiconductor Crystal Growth
OSHIYAMA, Atsushi
Designated professor
OSHIYAMA, Atsushi Lab
Project :
First-principle study on thin-film growth and surface/interface properties
KANGAWA, Yoshihiro
Designated Professor
Project :
Modeling and simulation of semiconductor epitaxy
YOSHIMATSU, Katsunori
Associate Professor
Project :
Computational Science on Crystal Growth from a Viewpoint of Fluid Dynamics
ARAIDAI, Masaaki
Assistant Professor
Project :
First-Principles Study on Electronic Property of Surface and Interface
HARASHIMA, Yosuke
Designated Assistant Professor
Project:
Computational Studies on Semiconductor Crystal Growth
BUI Thi Kieu My
Designated Assistant Professor
Project :
First Principles Simulations of GaN MOVPE Growth
IMOTO, Fumihiro
Researcher
IMOTO, Fumihiro
Project:
First-Principles Study on Electronic Property of Surface and Interface
CHOKAWA, Kenta
Researcher
CHOKAWA, Kenta
Project:
First-Principles Study on Electronic Property of Surface and Interface
VALENCIA, Hubert
Researcher
VALENCIA, Hubert
Project :
First Principles Simulations of GaN MOVPE Growth

Materials Nano-Characterization Section

The Materials Nano-Characterization Section develops nanoscale operand analysis techniques for semiconductor devices under operating conditions using electron microscopy and electron holography.
These efforts are part of research centered on themes such as interface electronic properties involving direct measurement of device operations and electric-field response measurements for semiconductor interface electronic structures.

Nano-Electronic Materials
Materials Nano-Characterization Section

Direct electrostatic potential mapping in nano-scaled FET
under operation mode using electron holography

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IKARASHI, Nobuyuki
Professor
Project :
Nano-science and advanced electron microscopy for device innovation
NAGAO, Masahiro
Associate Professor
Project :
Analysis of Magnetic Properties by Advanced Electron Microscopy toward the Development of New Devices
KANO, Emi
Assistant Professor
Project :
Advanced electron microscopy analysis of GaN and other nitride semiconductors

Visiting Faculty

TANAKA, Nobuo
Professor Emeritus
TANAKA, Nobuo
Project :
Fabrication, Characterization and Application of New Nano-Materials — Basic Study of NanoTechnology Using Advanced Electron Microscopy —

System Applications Section

For the purpose of realizing high-efficiency, small, and lightweight power converters and motors used in hybrid vehicles, electric vehicles, power infrastructures, and next-generation airclafts, we carry out applied research on power electronics technology by integrating fields related to power semiconductors, controlling technology, and magnetic applications. We also conduct researches for RF applications focusing on the advantages of gallium nitride (GaN) devices.

Power Electronics
Sightseeing electric vehicle developed in our laboratory
(equipped with in-wheel motors, can be fully charged by capacitor charging in 4 min compared with 5 h using conventional batteries)
Practical automobile power converter with highest power density in the world (3 W/cc or more) realized using
GaN power semiconductor
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Member
YAMAMOTO, Masayoshi
Project :
GaN and SiC power semiconductor module techniques and its industry applications
ARAI, Daisuke
Researcher
ARAI, Daisuke Lab
Project:
Analysis and optimization of the behavior of GaN devices used in power electronic circuits
KAMIYA, Arihiro
Researcher
KAMIYA, Arihiro Lab
Project:
Research of electronics packaging technologies for GaN and SiC power semiconductor module and its industry applications and its industry applications
SHIGEMATSU, Koichi
Researcher
SHIGEMATSU, Koichi Lab
Project:
Research of advanced system simulation for Power Electronics and it's applications
SENANAYAKE, Thilak Ananda
Researcher
SENANAYAKE, Thilak Ananda Lab
Project:
High Frequency Wireless Power Conversion Circuit using GaN Semiconductor Devices

Visiting Faculty

SATO, Shinji
Visiting Professor
SATO, Shinji
Project :
Driving technique and circuit topology for GaN and SiC power semiconductor modules
HOSOTANI, Tatsuya
Visiting Professor
HOSOTANI, Tatsuya
Project :
High frequency power conversion circuit modules and industrial applied technology development
MOSTAFA, Noah
Visiting Associate Professor
MOSTAFA, Noah
RF Circuits
RF circuits group conducts researches of new circuit technology and the basic performance improvement of the elementary devices, aiming for micro- and millimeter-wave applications such as wireless energy transfer, next generation wireless communication systems, etc. By taking full advantages of gallium nitride (GaN) devices, we aim to dramatically reduce the energy consumptions and contribute to the realization of the society coping both convenience and sustainability.

Micro- and millimeter-wave applications tree of GaN

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HARA, Shinji
Designated Professor
Project :
Circuit design technologies using GaN for microwave & millimeter-wave applications
SUZUKI, Asako
Researcher
SUZUKI, Asako
Project:
Circuit design technologies using GaN for microwave & millimeter-wave applications
MORIWAKI, Atsushi
Researcher
MORIWAKI, Atsushi
Project:
Improving simulation accuracy of GaN devices for microwave and millimeter-wave applications

International Research Section

In the area of devices utilizing cutting-edge electronics materials, this section focuses on the integration of such devices into various systems and pursues applied research with an eye toward real-life applications throughout society. The International Research Section engages in research and development activities together with visiting professors invited from overseas. Additionally, the Section is cultivating an international research network as part of efforts to form a central venue for nitride semiconductor research.

New Ⅲ-Nitride Approaches
Future devices needs further Ⅲ-Nitride semiconductor development. This is especially true for the substrates and templates, since those ultimatively limit the performance. We explore these limits also by making proof of principle devices.
Reciprocal space map 1
Reciprocal space map 2

Reciprocal space map using high-resolution X-ray diffraction to estimate the basal plane stacking fault density
on (10-13) GaN crystals for green LEDs

Orientation of single phase (10-13) AlN on sapphire produced

Orientation of single phase (10-13) AlN on sapphire produced by directional sputtering
and high-temperature annealing.

Atomic force microscope images

Atomic force microscope images of (10-10) AlN films prepared by metal-organic vapour phase epitaxy with three different nucleation times and annealed at different temperatures.
Numbers indicate roughness in nanometer.

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PRISTOVSEK, Markus
Designated Professor
Project :
Better device materials from a better understanding of crystal growth
Crystal Growth
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Visiting Faculty

GRAHAM, Samuel
Visiting Professor
GRAHAM, Samuel Lab
Project :
Thermal Properties and Thermal Management of GaN Devices
SITAR, Zlatko
Visiting Professor
SITAR, Zlatko Lab
Project :
Bulk, epitaxial growth, and device development in III-nitrides
SEONG, Tae-Yeon
Visiting Professor
SEONG, Tae-Yeon
CHOWDHURY, Srabanti
Visiting Professor
CHOWDHURY, Srabanti
BOCKOWSKI Michal Stanislaw
Visiting Professo
BOCKOWSKI Michal Stanislaw
Project :
Advanced nitride semiconductors growth by HVPE
LEE, Dong Seon
Visiting Professo
LEE, Dong Seon

Industry-Academia Collaborative Research Section

This section aims to boost the efficiency of collaborative industry‒academia research and development activities, and also serves as a mediator to help realize actual applications of CIRFE achievements and results in society.

Research strategy section

This section is established to promote implementation of gallium nitride technologies to our society. It organizes and promotes industry-academia collaborations as well as joint research projects. This section also provides a function of secretariat of GaN research strategy office of Nagoya University.

Research strategy section
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SUDA, Jun
Professor
ARAI, Manabu
Designated Professor
SASAOKA, Chiaki
Designated Professor
NARUKAWA, Mitsuhisa
Researcher
NARUKAWA, Mitsuhisa
SATO, Hiroya
University Research Administrator
SATO, Hiroya
MIZUNO, Koichi
University Research Administrator
MIZUNO, Koichi
FUJIMOTO, Hiromasa
University Research Administrator
FUJIMOTO, Hiromasa
YAMAGUCHI, Atsushi
University Research Administrator
YAMAGUCHI, Atsushi