Industry–Academia Collaborative Chair

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Industry–Academia Collaborative Chair

AIST-NU GaN Advanced Device Open Innovat ion Laboratory
Our laboratory covers the research area from materials science to application of nitride semiconductors. To function as a bridge between research and indus - try, we purposely examine basic research, and expe - dite connecting research results to practical use.
AlGaN/GaN HEMT

AlGaN/GaN HEMT

Switching characteristics

Switching characteristics

Schematic of a novel directional LED based on evanescent wave coupling

Schematic of a novel directional LED based on evanescent wave coupling

Emission pattern

Emission pattern

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SHIMIZU, Mitsuaki
Designated Professor
SHIMIZU, Mitsuaki
Project:
GaN power electronics
WANG, Xuelun
Designated Professor
WANG, Xuelun
Project:
Optical devices
Amano-Koide Col laborat ive Research Lab
This collaborative research laboratory was established in Nagoya Univ. and NIMS and is managed by Prof. Hiroshi Amano and Dr. Yasuo Koide, NIMS Executive Vice President, as a mutual cross-appointment. It facilitates crystallographic, electrical, and optical property characterization and the development of new measurement tech - niques for developing GaN-based power devices. The research will be effectively promoted by using advanced measurement and analysis equipment and techniques in NIMS.
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AMANO, Hiroshi
Professor
KOIDE, Yasuo
Designated Professor
project:
Atomistic and Mapping Characterization and Analysis for GaN Crystal, Wafer, and Devices
TANAKA, Atsushi
Designated Associate Professor
TANAKA, Atsushi
Project:
Initiation of the next-generation power devices using GaN
LIU, Ting
Researcher
LIU, Ting
Toyota Advanced Power Elect ronics Indust ry-Academia Col laborat ive Chair
Toward the realization of gallium nitride power semiconductor devices, this division researches and develops following new techniques:
1. Processing techniques that will enable the controllability of defects, impurities and damages with high accuracy
2. Device design technology for low-loss and high-switching devices
3. System applications using new gallium nitride power devices with high-performance
Design of vertical GaN-MOSFET structure

Design of vertical GaN-MOSFET structure

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UESUGI, Tsutomu
Designated Professor
Project:
Research of Fabrication Process and Device Structure of GaN Power Devices
KONDO, Takeshi
Designated Lecturer
Project:
Research of Fabrication Process and Device Structure of GaN Power Devices
DENSO Automot ive Power Elect ronics Indust ry-Academia Col laborat ive Chair
DENSO Automotive Power Electronics Industry‒Academia Collaborative Chair is looking into the future of high-power, high-frequency, and high-efficiency electric drive systems for HVs, EVs, and FCVs, and promoting exploratory re - search into next-generation power semiconductor materials, devices, and application systems
Characteristics and applications of next-generation power semiconductor

Characteristics and applications of next-generation power semiconductor

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ONDA, Shoichi
Designated Professor
Project:
Development of Crystal growth of the next-generation power-semiconductor materials
KOJIMA, Jun
Designated Associate Professor
Project:
Research of quality improvements and cost-reduced technologies of the next-generation power semiconductor crystals
TOYODA-GOSEI GaN Leading Innovat ive R&D Indust ry-Academia Col laborat ive Chair
In 1986, Toyoda Gosei Co., Ltd., started a joint research project with Professor Akasaki, Professor Amano, and Toyota Central R&D Labs., Inc., and began fundamental research on GaN materials. The commercialization of LEDs and their subsequent widespread adoption were based on this research. The core competencies cultivated from research, commercialization, expansion, and continuation will be utilized to create new business opportunities.
豊田合成
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USHIDA, Yasuhisa
Designated Associate Professor
Project:
Research of GaN to new product development
AsahiKASEI Innovat ive Devices Indust ry-Academia Col laborat ive Chair
AsahiKASEI Innovative Devices IA Collaborative Chair exploit our high-quality AlN single-crystal substrate technology, exploratory research into novel devices, and applications to create new busi - ness opportunities.
旭化成

2-inch, single-crystal AlN substrate

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SCHOWALTER, Leo John
Designated Professor
SCHOWALTER, Leo John
Project:
Research and development of application and innovative devices of single crystal aluminum nitride
SUGIYAMA, Naoharu
Designated Lecturer
Project:
Research of nitride semiconductor and thin film Project crystal for UV-light emitting devices
ZAHNG, Ziyi
Designated Assistant Professor
Project:
Research and development of UV-light emitting devices of nitride semiconductor
TOYOTA CENTRAL R&D LABS GaN Power Device Indust ry-Academia Col laborat ive Chair
In order to realize GaN power devices, we research the following:
  1. ①epitaxial growth with precise control of impurities and point defects
  2. ②gate insulators and MOS interfaces
  3. ③process technologies, such as low-damage etching and ion implantation
  4. ④device design for very low loss

Fig.1 A Vertical trench GaN device

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TOMITA, Kazuyoshi
Designated Professor
Project:
High-quality epitaxial growth for GaN power Project devices
兼近 将一
Designated Professor
Project:
Process technology and device design and Project evaluation for GaN power devices