C-TEFs : Center for Integrated Research of Future Electronics, Transformative Electronics Facilities

Home>Organization>C-TEFs : Center for Integrated Research of Future Electronics, Transformative Electronics Facilities

C-TEFs : Center for Integrated Research of Future Electronics, Transformative Electronics Facilities

The Center for Integrated Research of Future Electronics ‒ Transformative Electronics Facilities( C-TEFs) is an experimental facility of IMaSS at Nagoya University. It has a large clean room of about 1,000 m²( Class 1,000 exposure area; Class 10,000 process area) for conducting accelerated crystal growth, device processes, and evaluation in GaN research and development.
エネルギー変換エレクトロニクス実験施設
introduction(2m37s)
Features

(1) Submicron processing line specialized for GaN Electronics

  • Complete end-to-end process of GaN power devices from crystal growth to device fabrication
  • Equipment capable of submicron feature fabrication, including an i-line stepper
  • Operation management and contract fabrication services by technical development staff
  • Shared user facility system with fee structure to allow use by outside organizations

(2)Target device

  • GaN-on-GaN vertical power device
  • GaN-based optical device
  • AlGaN/GaN lateral HEMT device
  • GaN future device
show member
hide member
member
SUDA, Jun
Professor
SUDA, Jun
Director
ONDA, Shoichi
Desiqnated Professor
ONDA, Shoichi
Vice-Director
KACHI, Tetsu
Desiqnated Professor
KACHI, Tetsu
Vice-Director
SASAOKA, Chiaki
Desiqnated Professor
SASAOKA, Chiaki
Facility Control Manager
IIJIMA,Akifumi
Technical Staff
IIJIMA, Akifumi
SHINAGAWA, Tomohiro
Technical Staff
SHINAGAWA, Tomohiro
NISHII, Katsunori
Technical Staff
NISHII, Katsunori
NIWA, Hiroki
Technical Staff
NIWA, Hiroki
YAMAMOTO, Hiroki
Technical Staff
YAMAMOTO, Hiroki
YOKOYAMA, Takahiro
Technical Staff
YOKOYAMA, Takahiro